1/9
ADVANCED DATA
June 2002
STGP7NB60KD STGB7NB60KD
STGP7NB60KDFP
N-CHANNEL 7A - 600V
- TO-220/TO-220FP/D
2
PAK
PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
VERY HIGH FREQUENCY OPERATION
s
SHORT CIRCUIT RATED
s
CO-PACKAGED WITH TURBOSWITCHTM
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
TM
IGBTs, with outstanding performances.
The suffix "K" identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
(
n
) Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat)
I
C
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
< 2.8
V
< 2.8
V
< 2.8 V
7 A
7 A
7 A
Symbol
Parameter
Value
Unit
STGP7NB60KD
STGB7NB60KD
STGP7NB60KDFP
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuos) at T
C
= 25C
14
A
I
C
Collector Current (continuos) at T
C
= 125C
7
A
I
CM
(
n
)
Collector Current (pulsed)
56
A
P
TOT
Total Dissipation at T
C
= 25C
80
35
W
Derating Factor
0.64
0.28
W/C
V
ISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25C)
--
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STGP7NB60KD/FP/STGB7NB60KD
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
SWITCHING ON
TO-220
D
2
PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.56
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-h
Thermal Resistance Case-heatsink Typ
0.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
50
A
V
CE
= Max Rating, T
C
= 125 C
500
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
5
7
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 7 A
2.3
2.8
V
V
GE
= 15V, I
C
= 7 A, Tc =100C
1.9
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
=7 A
5
S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
560
pF
C
oes
Output Capacitance
68
pF
C
res
Reverse Transfer
Capacitance
15
pF
Q
g
Total Gate Charge
V
CE
= 480V, I
C
= 7 A,
V
GE
= 15V
42
nC
Q
ge
Gate-Emitter Charge
7.9
nC
Q
gc
Gate-Collector Charge
17.6
nC
tscw
Short Circuit Withstand Time
V
ce
= 0.5 V
BR(CES)
,
V
GE
= 15 V
,
Tj = 125C , R
G
= 10
10
s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, I
C
= 7 A
R
G
= 10
, V
GE
= 15 V
15
ns
t
r
Rise Time
48
ns
(di/dt)
on
Turn-on Current Slope
V
CC
= 480 V, I
C
= 7 A R
G
=10
V
GE
= 15 V,Tj = 125C
160
A/s
Eon
Turn-on Switching Losses
70
J
3/9
STGP7NB60KD/FP/STGB7NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 10
, V
GE
= 15 V
85
ns
t
r
(V
off
)
Off Voltage Rise Time
20
ns
t
d
(
off
)
Delay Time
75
ns
t
f
Fall Time
70
ns
E
off
(**)
Turn-off Switching Loss
85
J
E
ts
Total Switching Loss
235
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
150
ns
t
r
(V
off
)
Off Voltage Rise Time
50
ns
t
d
(
off
)
Delay Time
110
ns
t
f
Fall Time
110
ns
E
off
(**)
Turn-off Switching Loss
220
J
E
ts
Total Switching Loss
405
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
6
48
A
A
V
f
Forward On-Voltage
I
f
= 6 A
I
f
= 6 A, Tj = 125 C
1.8
1.4
2.2
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 6 A ,V
R
= 200 V,
Tj =125C, di/dt = 100A/
s
100
135
2.7
ns
nC
A
STGP7NB60KD/FP/STGB7NB60KD
4/9
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
5/9
STGP7NB60KD/FP/STGB7NB60KD
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STGP7NB60KD/FP/STGB7NB60KD
6/9
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
7/9
STGP7NB60KD/FP/STGB7NB60KD
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
D
2
PAK MECHANICAL DATA
3
STGP7NB60KD/FP/STGB7NB60KD
8/9
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
9/9
STGP7NB60KD/FP/STGB7NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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